Difference between mosfet and IGBT

In this article we will learn about the main difference between MOSFET and IGBT. We know about the main working of MOSFET and IGBT.

Working of MOSFET

They have generally a planner structure. The silicon oxide layer acts as insulating layer to allow source and drain connections to the n-regions.                      
Difference between MOSFET and IGBT , basic difference between mosfet and igbt, working of igbt
When gate is made positive with respect to source then electric field draws free electrons to P-substrate to from n-channel. It is a voltage-controlled device and the conduction is entirely due to movement of electrons and in p-channel MOSFET conduction is entirely due to movement of holes. 


Overview of IGBT

IGBT is the insulated gate bipolar junction transistor. It is a three terminal device namely gate(G), collector( C), and emitter (E) it is a voltage controlled device . IGBT has the advantage of both BJT and MOSFET, it has high input impedance and low conduction losses. IGBT have low switching speed then MOSFET.

Other meaning of IGBT

1. Conductivity modulated field effect transistor (COMFET)
2. Insulated gate conductor
3. Bipolar mode MOSFET
4. Bipolar mode transistor

Difference between mosfet and IGBT

Difference between MOSFET and IGBT , basic difference between mosfet and igbt, working of igbt

           MOSFET                                                    IGBT

1. In the power MOSFET the decreased in the electron mobility with increasing temperature result in a rapid increased in the on state resistance of the channel and hence the on state drop.
In IGBTs, this increase in voltage drop is very small.
2. The on stage voltage drop increases by a factor of 3 between room temperature and 200 degree sallies.
Here with the identical conditions, the increment in the on state voltage drop is very small.
3. All highest temperature, maximum current rating goes down to 1/3 value.
At high ambient temperature: IGBT is extraordinary well suited.
4. Current sharing in multiple paralleled MOSFETs is comparatively poor than IGBTs.
Current sharing in multiple parallel IGBTs is far better than power MOSFET.
5. The turn on transients is to MOSFETs
Turn on transients is identical identical to IGBTs..
6. Power MOSFET is suited for applications that require low blocking voltages and high operating.
IGBT is the preferred device for applications that require high blocking voltages and lower operating frequencies.
7. it is less better in power handling
It is better in power handling than MOSFET.
8. MOSFET have not PN junctions.
IGBT have PN junction

Hence these are some difference between MOSFET and IGBT. if you will find any incorect in above article please  comment in comment box.

If you want to know more about the basic difference between IGBT and MOSFET. you must watch this video.

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